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| geometry principal device type cxdm3069n gross die per 8 inch wafer 43,500 process CP370 n-channel mosfet enhancement-mode mosfet chip process details die size 39 x 27 mils die thickness 7.5 mils gate bonding pad area 6.5 x 6.5 mils source bonding pad area 30 x 20 mils top side metalization al - 40,000? back side metalization ti/ni/ag - 1,000?/3,000?/10,000? www.centralsemi.com r0 (10-december 2012)
process CP370 typical electrical characteristics www.centralsemi.com r0 (10-december 2012) |
Price & Availability of CP370
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